high-tech business established with a goal of becoming the world’s premier solution for reliability and noise assessment/analysis.
Korea Sensor Lab.


    •  Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs IEICE Transactions on Electronics, 2013 May
       Analysis of reliability characteristics of high capacitance density MIM capacitors with SiO2-HfO2-SiO2 dielectrics Microeletronic Engineering, 2011 December
       Analysis of trap effect on reliability using the charge pumping technology in La-incorporated high-k dielectrics Microeletronic Engineering, 2011 December
       Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance Si1-xGex pMOSFETs With High-k/Metal Gate Stacks IEEE Electron Device
      Letters, 2010 November
       Time-Dependent Dielectric Breakdown of La2O3-Doped High-k/Metal Gate Stacked NMOSFETs IEEE Electron Device Letters, 2009 March
       New Observation of Mobility and Reliability Dependence on Mechanical Film Stress in Strained Silicon CMOSFETs IEEE Transactions on Electron Devices, 2008 June
       PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High-kDielectrics IEEE Electron Device Letters 2008 April
       Effects of In Situ O2 Plasma Treatment on off-State Leakage and Reliability in Metal-Gate/High-k Dielectric MOSFETs IEEE Electron Device Letters, 2008 June

    •  Effects of High-Pressure Annealing on Random Telegraph Signal Noise Characteristic of Source Follower Block in CMOS Image Sensor IEEE Electron Device Letters,
      2013 February
       Analysis of Flicker Noise for Improved Data Retention Characteristics in Silicon-Oxide-High-k-Oxide-Silicon Flash Memory Using N2 Implantation Journal of Nanoscience and
      Nanotechnology 2013 May
       Investigation of the Gate Bias Stress Instability in ZnO Thin Film Transistors by Low-Frequency Noise Analysis Japanese Journal of Applied Physics, 2013 Feb
       Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-k Dielectric/Metal Gate IEEE Electron Device Letters, 2011 May
       Crystal Quality Effect on Low-Frequency Noise in ZnO TFTs IEEE Electron Device Letters, 2011 December
       Decoupling of RTS noise in high density CMOS image sensor using new test structures ICMTS 2011 p.5.1
       Dependence of 1/f noise characteristics of NMOSFETs on body bias and temperature in sub-threshold region ISDRS 2011

    •  Uncooled Microbolometer Arrays With High Responsivity Using Meshed Leg Structure IEEE Photonics Technology Letters, 2013 November

    •  A Study of Dielectric Relaxation and Capacitance Matching of Al2O3/HfO2/Al2O3 MIM Capacitors IEEE Electron Device Letters, 2013 October
       Characterization of Al2O3/HfO2/Al2O3 sandwiched MIM capacitor under DC and AC stresses Solid State Electronics, 2013 January
       Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor Microelectronic Engineering, 2011 November
       Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs Microelectronic Engineering, 2011 December
       Comparison of Multilayer Dielectric Thin Films for Future Metal-Insulato-Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2 Japanese Journal of Applied Physics,
      2011 October
       Decrease of Dark Current by Reducing Transfer Transistor Induced Partition Noise With Localized Channel Implantation IEEE Electron Device Letters, 2010 November
       Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications IEEE Transactions on Nanotechnology, 2009 September
       A comprehensive and comparative study of interface and bulk characteristics of nMOSETs with la-incorporated high-k dielectrics IEDM (International Electron Device Meeting), 2008
       Abnormal drain current (ADC) effect and its mechanism in FD SOI MOSFETs IEEE Electron Device Letters, 2006 February
       On-chip charge pumping method for characterization of interface states of ultra thin gate oxide in nano CMOS technology IEDM (International Electron Device Meeting), 2005

    •  Thermally Robust Ni Germanide Technology Using Cosputtering of Ni and Pt for High-Performance Nanoscale Ge MOSFETs IEEE Transactions on Nanotechnology, 2012 July
       A study of capping layers for sulfur monolayer doping on III-V junctions Applied Physics letters, 2012 December - Novel Palladium Germanide Schottky Contact for High
      Performance Schottky Barrier Ge MOSFETs and Characterization of Its Leakage Current Mechanism Journal of Nanoscience and Nanotechnology, 2012 July
       Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors Japanese
      Journal of Applied Physics, 2012 Feb
       Improvement of Thermal Stability of Ni Germanide Using a Ni–Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs IEEE Transactions on Nanotechnology,
      2010 March
       Thermal Immune NiGermanide for High Performance Ge MOSFETs on Ge-on- Si Substrate Utilizing Ni0.95Pd0.05 Alloy IEEE Transactions on Electron Devices, 2009 February
       Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors Applied Physics Letters,
      2013 Vol:102, No:17
       Thermal Stability Improvement of Ni–Germano silicide Utilizing Ni–Pd Alloy for Nanoscale CMOS Technology IEEE Transactions on Nanotechnology, 2007 July
       Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates IEEE Electron Device Letters,
      2007 November
       Work function variation of nickel silicide using an ytterbium buffer layer for Schottky barrier metal-oxide-semiconductor field-effect transistors Journal of Applied Physics,
      2007 Vol:101, No:10
       Co-Induced Low-Temperature Silicidation of Ni Germanosilicide Using NiPt Alloy and the Effect of Ge Ratio on Thermal Stability IEEE Transactions on Nanotechnology,
      2007 September