high-tech business established with a goal of becoming the world’s premier solution for reliability and noise assessment/analysis.
Korea Sensor Lab.


    Semiconductor

    • 1. Abrupt Increase in the Standby Power Consumption of a Semiconductor Chip

       Defect caused when the standby power consumption of a semiconductor chip increases abruptly
       Device inspection: no issues
       Standby power consumption increase during action: verification of heating caused by stress
       Inspection of outcome of stress: verification of hump occurrence caused by stress
       Verification of increase in off currents following hump occurrence
       Identification of the cause for the increase in standby power consumption

    • 2. Degradation in the Performance of the Semiconductor Chip

       Degradation in the performance of the semiconductor chip
       Device inspection: no issues
       Reliability inspection of the PMOS device: device heating caused by NBTI a possibility
       Reliability inspection of the NBTI: extraction of NBTI lifetime
       Verification of drastic decline in NBTI lifetime
       Identification of the cause of the performance degradation

    • 3. Performance Defect of the Analog Semiconductor Chip

       Performance defect of the analog semiconductor chip
       Device inspection: No issues
       Analog heating: Increase in low-frequency noise questionable
       RTS Noise Assessment: Verification of RTS noise occurrence
       Verification of increase in rate of change of drain current caused by RTS Noise
       Verification of degradation in analog circuit performance caused by the increase in RTS noise
       Identification of the cause for the defect in the analog semiconductor chip

    • 4. Assessment of Flicker Noise in Resistor for Analog Circuits/Chips

       Assessment of low-frequency noise in resistors used for analog semiconductor circuits
       Inspection of DC property in resistor: No issues
       Possibility of analog heating: Need for low-frequency noise assessment
       Flicker Noise (1/f Noise) Assessment: Confirmation of flicker noise occurrence
       Confirmation of flicker noise greater than thermal noise at low-frequency (<100 kHz)
       Confirmation of the possibility of the degradation in the performance of the analog circuit caused by the resistor’s flicker noise
       Identification of the necessity for measure to decrease resistor’s flicker noise

    • 5. Enhancement for the Reliability of Semiconductor Devices’ Hot Carrier

       Defect in the semiconductor device’s hot carrier (Wafer 1)
       Device inspection: No issues
       Proposition for a hot carrier reliability improvement process (Wafer 2)
       Hot carrier reliability after adoption of new process
       Verification that the hot carrier’s lifetime is greater than Spec
       Resolution to the reliability defect of the hot carrier

    • 6. Reliability Assessment of Capacitors

       Necessity for early-stage identification of the possibility of issues regarding capacitor reliability
       Capacitor action inspection: Measurement of voltage-current properties
       Stability up to 25V: No issues
       Reliability assessment: Voltage stress (TDDB) assessment
       Reliability assessment results: Lifetime is critically low at 0.35 years compared to that of Spec
       Reliability improvement plan taken to address the issue early in the stage

    • 7. Assessment of the RF Properties of Post-Processing Wiring

       Necessity of the analysis of the possible performance degradation of fast moving chips caused by interconnection/package
       Necessity of the analysis of the inductance component from interconnection/package
       RF test pattern implementation
       Post-production RF property measurement (S-Parameter)
       Simulation of the impact against motion speed through RLC Modeling
       Analysis of the impact against chip performance through the extraction of the inductance